Quasi‐Vertical Diamond Schottky Barrier Diode With Sidewall‐Enhanced n‐<scp>Ga₂O₃</scp>/p‐Diamond Junction Termination Extension

ABSTRACT In the present study, a quasi‐vertical diamond Schottky barrier diode (SBD) with a junction termination extension (JTE) structure is designed and simulated using Silvaco software. We firstly investigate the influences of spatial location and thickness of the n‐Ga 2 O 3 /p‐diamond PN junction on the electrical performances. Subsequently, the doping concentration and width of the JTE region are optimized to achieve the highest Baliga Figure of Merit (BFOM) value, with the underlying mechanisms governing the electrical characteristics systematically analyzed. Furthermore, we also propose a sidewall‐enhanced JTE structure to improve the breakdown voltage without influencing the on‐resistance and turn‐on voltage. In addition, it is found that the etching depth of the mesa presents minimal influence on the diamond SBD. These findings are beneficial to realizing a high‐performance quasi‐vertical diamond SBD.