On an investigation of optoelectrical features in Au/(MWCNT:PVA-B(OH)3)/n-Si structure, using I–V data, in dark and illumination conditions

Abstract In this article, Au/n-Si metal/(organic/polymer)/semiconductor (MPS) devices with (MWCNT-doped PVA-B(OH) 3 ) interlayer grown by spin-coating were prepared, electrical/optical characteristics of them have been extracted from the I–V characteristics as function of illumination (dark-100 mW/cm 2 ) and time (0–200 s). The values of quality factor ( n ), reverse saturation-current (I 0 ), potential-barrier height (BH/ Ф B0 ), series/shun resistances ( R s , R sh ), and rectification/ratio (RR) have been obtained from the I–V characteristics by utilizing thermionic emission (TE) mechanism, Cheung functions, and Norde method for all illumination intensities ( P ). The energy dependence profiles of interface states ( N ss ) in dark and under 100 mW/cm 2 illumination intensity was also calculated by using the I–V data at positive bias region by considering voltage dependence of BH and n , and they change at about between 1.7 × 10 14 eV −1 cm −2 at 0.70 eV and 4 × 10 14 eV −1 cm −2 at 0.45 eV. According to the I–t–P measurements, the photocurrent ( I ph ) increases with increasing P , and sample was found strong function of illumination and exhibited photo-sensing properties. The slopes of the log( I ph )−log( P ) plots were found to be between 0.25 and 0.70, indicating a linear photoconductive behavior. Furthermore, the photosensitivity ( S ), photo-responsivity ( R ), and specific-detectivity ( D * ) of the sample for various light intensities were investigated. All experimental results show that the fabricated diodes are considerably dependent on voltage and illumination intensity.