Demonstration of Efficient Non‐Volatile Boolean Logic With Non‐Volatile and Ambipolar Fin Field‐Effect Transistors for In‐Memory Computing

ABSTRACT In this letter, we demonstrate an efficient non‐volatile Boolean logic based on a single Schottky barrier and ferroelectric FinFET (SB‐Fe FinFETs) has been proposed and experimentally demonstrated. Ferroelectric HZO and metallic source and drain (MSD) were adopted r for non‐volatile and ambipolar characteristics on the devices. Benefiting from the designed multi‐level reading operation and the non‐volatile ambipolar characteristics, complete Boolean logic functions have been demonstrated on single SB‐Fe FinFET. Furthermore, thanks to the single gate pulse for both input B and read operation, all Boolean logic functions can be implemented in two steps. Robust output current and high speed for the logic functions are identified in the experimental results, indicating the technology promising for future logic‐in‐memory applications.