Theoretical Study of Resonant Tunneling in ZnO/ZnCdO Triangular Double-Barrier Heterostructure

ZnO/ZnCdO triangular double-barrier heterostructure is considered to examine the tunneling properties of electrons. The Airy function is used as the eigen function in the barrier region. The transfer matrix is formed by implementing boundary conditions and hence transmission coefficients are evaluated. The role of barrier width, Cd concentration and heterostructure strain on resonant tunneling are discussed. The increasing barrier width shifts the transparency peak to the higher energy level. The increasing Cd concentration has a huge role in deciding the tunneling properties of electrons in the heterostructure. The account of strain has great influence and the effect of strain is dominant at a high value of Cd concentration. The tunneling lifetime of electrons is also discussed.

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Publication Details

Journal
Semiconductors
Published
2025-03-01
DOI
https://doi.org/10.1134/s1063782624602620
Citations
2
Primary Topic
ZnO doping and properties
Type
article
Field-Weighted Citation Impact
1.04
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article

Theoretical Study of Resonant Tunneling in ZnO/ZnCdO Triangular Double-Barrier Heterostructure

A. Dinesh, Lalitha Gnanasekaran, Madhappan Santhamoorthy, E. Priyadharshini et al.
2 citations
Semiconductors
ZnO doping and properties
1.04
article

Theoretical Study of Resonant Tunneling in ZnO/ZnCdO Triangular Double-Barrier Heterostructure

A. Dinesh, Lalitha Gnanasekaran, Madhappan Santhamoorthy, E. Priyadharshini, L. Bruno Chandrasekar, M. Karunakaran, L. Guganathan, E. Lavanya
article en
2 citations

Abstract

ZnO/ZnCdO triangular double-barrier heterostructure is considered to examine the tunneling properties of electrons. The Airy function is used as the eigen function in the barrier region. The transfer matrix is formed by implementing boundary conditions and hence transmission coefficients are evaluated. The role of barrier width, Cd concentration and heterostructure strain on resonant tunneling are discussed. The increasing barrier width shifts the transparency peak to the higher energy level. The increasing Cd concentration has a huge role in deciding the tunneling properties of electrons in the heterostructure. The account of strain has great influence and the effect of strain is dominant at a high value of Cd concentration. The tunneling lifetime of electrons is also discussed.

SemiconductorsVol. 59(3)
Alagappa University (IN), Vels University (IN), University of Tarapacá (CL), Anna University, Chennai (IN), Velammal Educational Trust (IN), Social Service Sericulture Project Trust (IN), Yeungnam University (KR), Karpagam Academy of Higher Education (IN), Saveetha University (IN)
Openalex Percentile: Top 27%
ZnO doping and properties
1.04
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Theoretical Study of Resonant Tunneling in ZnO/ZnCdO Triangular Double-Barrier Heterostructure — A. Dinesh, Lalitha Gnanasekaran, et al. · Semiconductors (2025) | TGRS Research Map | TGRS