A Large Area Hybrid Phototransistor Platform with Large Detectivity and Fast Response to NIR Light

Abstract Within multijunction organic and hybrid photodetectors (PDs), organic and hybrid phototransistors (HPTs) hold promises for high sensitivity (S) and specific detectivity (D*). However, it is difficult to achieve a trade‐off between a large sensing area, a fast response, and a high D*. Here, we propose an alternative phototransistor concept relying on a geometrically engineered tri‐channel (Tr‐iC) architecture with a 4‐mm 2 large sensing area, applied to a multilayer HPT whose active region is comprised of an inorganic In 2 O 3 /ZnO n‐type field‐effect channel and solution‐processed organic bulk heterojunction (BHJ) or hybrid perovskite light‐sensing layer. The resulting HPTs combine a responsivity (R) up to 10 5 A/W, thanks to the efficient charge transport (at the bottom In 2 O 3 /ZnO layer) and a D* estimated at 10 15 Jones, which allows to measure low light power densities down to 10 nW cm −2 . These figures of merit are coupled to a fast response (risetime <10 ms and falltime of ≈100 ms for illumination, in the µW/cm 2 range), which is comparable to the time‐response of organic PDs in a diode architecture. The experimental data are supported by a comprehensive device modeling, which helps highlighting the peculiar advantages of the proposed large area, Tr‐iC, and multilayer HPT architecture.

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Publication Details

Journal
Advanced Electronic Materials
Published
2025-03-22
DOI
https://doi.org/10.1002/aelm.202400762
Citations
1
Primary Topic
Thermal Radiation and Cooling Technologies
Type
article
Field-Weighted Citation Impact
0.95

Funders

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A Large Area Hybrid Phototransistor Platform with Large Detectivity and Fast Response to NIR Light

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article en
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Abstract

Abstract Within multijunction organic and hybrid photodetectors (PDs), organic and hybrid phototransistors (HPTs) hold promises for high sensitivity (S) and specific detectivity (D*). However, it is difficult to achieve a trade‐off between a large sensing area, a fast response, and a high D*. Here, we propose an alternative phototransistor concept relying on a geometrically engineered tri‐channel (Tr‐iC) architecture with a 4‐mm 2 large sensing area, applied to a multilayer HPT whose active region is comprised of an inorganic In 2 O 3 /ZnO n‐type field‐effect channel and solution‐processed organic bulk heterojunction (BHJ) or hybrid perovskite light‐sensing layer. The resulting HPTs combine a responsivity (R) up to 10 5 A/W, thanks to the efficient charge transport (at the bottom In 2 O 3 /ZnO layer) and a D* estimated at 10 15 Jones, which allows to measure low light power densities down to 10 nW cm −2 . These figures of merit are coupled to a fast response (risetime <10 ms and falltime of ≈100 ms for illumination, in the µW/cm 2 range), which is comparable to the time‐response of organic PDs in a diode architecture. The experimental data are supported by a comprehensive device modeling, which helps highlighting the peculiar advantages of the proposed large area, Tr‐iC, and multilayer HPT architecture.

Advanced Electronic MaterialsVol. 11(17)
Institute of Nanostructured Materials (IT), King Abdullah University of Science and Technology (SA)
Ministero dell'Università e della Ricerca
Openalex Percentile: Top 28%
Thermal Radiation and Cooling Technologies
0.95
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