Carrier-mediated ferromagnetism and dielectric tailoring in dual-doped ZnO semiconductor nanoparticles for spintronics

The research and development of modified nanomaterials is critical for spin-based electronics storage systems, particularly novel magnetic materials with 100 % spin polarization at room temperature. This feature is present in a number of Zintl group compounds and should be investigated. This work thoroughly investigated the impact of (Co, Eu) co-doping on the structural, electrical, dielectric, and ferromagnetic properties of ZnO nanoparticles. At all doping concentrations, the tetragonal phase was retained, according to X-ray diffraction (XRD) examination. Dielectric investigations showed that while the dielectric constant (ε r' ) and dielectric loss ( ε '') decreased with increasing Eu content, the frequency-dependent improvement of AC electrical conductivity (σ AC ) was ascribed to charge hopping among nanograins and dielectric relaxation impacts. Magnetic studies were presented to explore the ferromagnetic response further, revealing a shift from diamagnetic behavior in pure ZnO to robust room-temperature ferromagnetism (RTFM) in Co-doped and (Co, Eu) co-doped ZnO nanoparticles. Strong carrier-mediated exchange contacts and defect-induced magnetism were shown by the increased remanent magnetization (Mr) and coercivity (Hc) that accompanied increasing Eu content, peaking at 5 % Eu doping. Ferromagnetic ordering with a Curie temperature (T C ) of roughly 370 K for optimally doped materials was validated by Arrott plot analysis. The exchange interactions, defect-induced effects, and structural deformation all contribute to the magnetism in ZnO caused by Co and Eu doping. While Eu 3+ participates by forming partially filled 4f orbitals, Cobalt (Co 2+ ) ions contribute localized magnetic moments because of unpaired 3d electrons when they substitute Zn 2+ in the ZnO lattice. These dopants interaction facilitates long-range ferromagnetic coupling via carrier-mediated exchange processes, which include bound magnetic polarons (BMPs), in which oxygen vacancies trap charge carriers. The findings show that co-doped ZnO ferromagnetic behavior may be efficiently modulated by controlled Eu co-doping, which makes these materials attractive options for spintronic applications.

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Publication Details

Journal
Materials Science in Semiconductor Processing
Published
2025-03-23
DOI
https://doi.org/10.1016/j.mssp.2025.109487
Citations
33
Primary Topic
ZnO doping and properties
Type
article
Field-Weighted Citation Impact
17.09

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article

Carrier-mediated ferromagnetism and dielectric tailoring in dual-doped ZnO semiconductor nanoparticles for spintronics

Rajwali Khan, Akif Safeen, Sherzod Abdullaev, Khaled Althubeiti et al.
33 citations
Materials Science in Semiconductor Processing
ZnO doping and properties
17.09
article

Carrier-mediated ferromagnetism and dielectric tailoring in dual-doped ZnO semiconductor nanoparticles for spintronics

Rajwali Khan, Akif Safeen, Sherzod Abdullaev, Khaled Althubeiti, Shahnaz Kossar, Asif Rasool, Nasir Rahman, Shahid Iqbal, Ejaz Ahmad Khera, Sattam Al Otaibi
article en
33 citations

Abstract

The research and development of modified nanomaterials is critical for spin-based electronics storage systems, particularly novel magnetic materials with 100 % spin polarization at room temperature. This feature is present in a number of Zintl group compounds and should be investigated. This work thoroughly investigated the impact of (Co, Eu) co-doping on the structural, electrical, dielectric, and ferromagnetic properties of ZnO nanoparticles. At all doping concentrations, the tetragonal phase was retained, according to X-ray diffraction (XRD) examination. Dielectric investigations showed that while the dielectric constant (ε r' ) and dielectric loss ( ε '') decreased with increasing Eu content, the frequency-dependent improvement of AC electrical conductivity (σ AC ) was ascribed to charge hopping among nanograins and dielectric relaxation impacts. Magnetic studies were presented to explore the ferromagnetic response further, revealing a shift from diamagnetic behavior in pure ZnO to robust room-temperature ferromagnetism (RTFM) in Co-doped and (Co, Eu) co-doped ZnO nanoparticles. Strong carrier-mediated exchange contacts and defect-induced magnetism were shown by the increased remanent magnetization (Mr) and coercivity (Hc) that accompanied increasing Eu content, peaking at 5 % Eu doping. Ferromagnetic ordering with a Curie temperature (T C ) of roughly 370 K for optimally doped materials was validated by Arrott plot analysis. The exchange interactions, defect-induced effects, and structural deformation all contribute to the magnetism in ZnO caused by Co and Eu doping. While Eu 3+ participates by forming partially filled 4f orbitals, Cobalt (Co 2+ ) ions contribute localized magnetic moments because of unpaired 3d electrons when they substitute Zn 2+ in the ZnO lattice. These dopants interaction facilitates long-range ferromagnetic coupling via carrier-mediated exchange processes, which include bound magnetic polarons (BMPs), in which oxygen vacancies trap charge carriers. The findings show that co-doped ZnO ferromagnetic behavior may be efficiently modulated by controlled Eu co-doping, which makes these materials attractive options for spintronic applications.

Materials Science in Semiconductor ProcessingVol. 193
Islamia University of Bahawalpur (PK), Taif University (SA), United Arab Emirates University (AE), University of Mindanao (PH), GNA University (IN), National Pedagogical University of Uzbekistan named after Nizami (UZ), University of Poonch Rawalakot, New Uzbekistan University (UZ), University of Wisconsin–La Crosse (US), National University of Uzbekistan (UZ), University of Management and Technology (PK)
Taif University
Affordable and clean energy
Openalex Percentile: Top 0%
ZnO doping and properties
17.09
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