Methanol adsorption and dissociation on GaP(110) studied by ambient pressure X-ray photoelectron spectroscopy

• Ambient pressure X-ray photoelectron spectroscopy of GaP in CH 3 OH atmosphere. • DFT enables identification of CH 3 OH dehydrogenation products on GaP surface. • At room temperature, CH 3 O, CH 2 O, and hydrogen bonded CH 3 OH-CH 3 O are present. • Availability of surface phosphorus sites limits the formation of adsorbed CH 2 O. • Above 400 K, concentration of CH x species increases, suggesting C-O bond cleavage. Ambient pressure X-ray photoelectron spectroscopy (AP-XPS) was used to investigate methanol (CH 3 OH) adsorption and reaction on the GaP(110) surface. Exposure of CH 3 OH to GaP(110) at room temperature led to the formation of at least four different surface species as indicated by analysis of C 1s and O 1s XPS features. By combining AP-XPS data with density functional theory calculations, the surface species were identified as methoxy (CH 3 O*), formaldehyde (CH 2 O*), and paired methanol (p-CH 3 O*H) and methoxy (p-CH 3 O*) species, where “paired” means that they belong to a hydrogen-bonded methoxy-methanol complex. Asterisk * here indicates an adsite. The formation of CH 2 O* via the dehydrogenation of CH 3 O* was shown to be limited by the availability of vacant phosphorus (P) sites on GaP(110). With an increase in CH 3 OH pressure, the fractional coverage of CH 3 O* species reached 0.55, and the surface P sites were completely saturated with hydrogen. Under a constant CH 3 OH pressure of 0.5 Torr, the surface concentration of the paired species and of CH 2 O* remained constant until 400 K. At higher temperatures, thermally driven reactions led to a significant increase in the concentration of surface CH x * species, which suggests that C-O bond cleavage of the CH 3 O group is the dominant decomposition mechanism on GaP(110). Based on the reactivity of GaP(110) toward CH 3 OH dehydrogenation, elevated temperatures and CH 3 OH pressures may be used to functionalize this surface.

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Publication Details

Journal
Surface Science
Published
2025-03-22
DOI
https://doi.org/10.1016/j.susc.2025.122743
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26

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article

Methanol adsorption and dissociation on GaP(110) studied by ambient pressure X-ray photoelectron spectroscopy

Denis V. Potapenko, Shenzhen Xu, Iradwikanari Waluyo, Bruce E. Koel et al.
1 citations
Surface Science
GaN-based semiconductor devices and materials
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article

Methanol adsorption and dissociation on GaP(110) studied by ambient pressure X-ray photoelectron spectroscopy

Denis V. Potapenko, Shenzhen Xu, Iradwikanari Waluyo, Bruce E. Koel, Zhu Chen, Emily A. Carter, Xiaofang Yang, A. L. Gilman
article en
1 citations

Abstract

• Ambient pressure X-ray photoelectron spectroscopy of GaP in CH 3 OH atmosphere. • DFT enables identification of CH 3 OH dehydrogenation products on GaP surface. • At room temperature, CH 3 O, CH 2 O, and hydrogen bonded CH 3 OH-CH 3 O are present. • Availability of surface phosphorus sites limits the formation of adsorbed CH 2 O. • Above 400 K, concentration of CH x species increases, suggesting C-O bond cleavage. Ambient pressure X-ray photoelectron spectroscopy (AP-XPS) was used to investigate methanol (CH 3 OH) adsorption and reaction on the GaP(110) surface. Exposure of CH 3 OH to GaP(110) at room temperature led to the formation of at least four different surface species as indicated by analysis of C 1s and O 1s XPS features. By combining AP-XPS data with density functional theory calculations, the surface species were identified as methoxy (CH 3 O*), formaldehyde (CH 2 O*), and paired methanol (p-CH 3 O*H) and methoxy (p-CH 3 O*) species, where “paired” means that they belong to a hydrogen-bonded methoxy-methanol complex. Asterisk * here indicates an adsite. The formation of CH 2 O* via the dehydrogenation of CH 3 O* was shown to be limited by the availability of vacant phosphorus (P) sites on GaP(110). With an increase in CH 3 OH pressure, the fractional coverage of CH 3 O* species reached 0.55, and the surface P sites were completely saturated with hydrogen. Under a constant CH 3 OH pressure of 0.5 Torr, the surface concentration of the paired species and of CH 2 O* remained constant until 400 K. At higher temperatures, thermally driven reactions led to a significant increase in the concentration of surface CH x * species, which suggests that C-O bond cleavage of the CH 3 O group is the dominant decomposition mechanism on GaP(110). Based on the reactivity of GaP(110) toward CH 3 OH dehydrogenation, elevated temperatures and CH 3 OH pressures may be used to functionalize this surface.

Surface ScienceVol. 758
Brookhaven National Laboratory (US), Princeton University (US), Peking University (CN), University of Massachusetts Amherst (US), Princeton Plasma Physics Laboratory (US), National Synchrotron Light Source II
U.S. Department of Energy, Office of Science, Basic Energy Sciences, Air Force Office of Scientific Research, Brookhaven National Laboratory
Clean water and sanitation
Openalex Percentile: Top 23%
GaN-based semiconductor devices and materials
1.26
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