Methanol adsorption and dissociation on GaP(110) studied by ambient pressure X-ray photoelectron spectroscopy
• Ambient pressure X-ray photoelectron spectroscopy of GaP in CH 3 OH atmosphere. • DFT enables identification of CH 3 OH dehydrogenation products on GaP surface. • At room temperature, CH 3 O, CH 2 O, and hydrogen bonded CH 3 OH-CH 3 O are present. • Availability of surface phosphorus sites limits the formation of adsorbed CH 2 O. • Above 400 K, concentration of CH x species increases, suggesting C-O bond cleavage. Ambient pressure X-ray photoelectron spectroscopy (AP-XPS) was used to investigate methanol (CH 3 OH) adsorption and reaction on the GaP(110) surface. Exposure of CH 3 OH to GaP(110) at room temperature led to the formation of at least four different surface species as indicated by analysis of C 1s and O 1s XPS features. By combining AP-XPS data with density functional theory calculations, the surface species were identified as methoxy (CH 3 O*), formaldehyde (CH 2 O*), and paired methanol (p-CH 3 O*H) and methoxy (p-CH 3 O*) species, where “paired” means that they belong to a hydrogen-bonded methoxy-methanol complex. Asterisk * here indicates an adsite. The formation of CH 2 O* via the dehydrogenation of CH 3 O* was shown to be limited by the availability of vacant phosphorus (P) sites on GaP(110). With an increase in CH 3 OH pressure, the fractional coverage of CH 3 O* species reached 0.55, and the surface P sites were completely saturated with hydrogen. Under a constant CH 3 OH pressure of 0.5 Torr, the surface concentration of the paired species and of CH 2 O* remained constant until 400 K. At higher temperatures, thermally driven reactions led to a significant increase in the concentration of surface CH x * species, which suggests that C-O bond cleavage of the CH 3 O group is the dominant decomposition mechanism on GaP(110). Based on the reactivity of GaP(110) toward CH 3 OH dehydrogenation, elevated temperatures and CH 3 OH pressures may be used to functionalize this surface.
Authors
- Denis V. Potapenko
- Shenzhen Xu (ORCID: https://orcid.org/0000-0001-7268-9917)
- Iradwikanari Waluyo (ORCID: https://orcid.org/0000-0002-4046-9722)
- Bruce E. Koel (ORCID: https://orcid.org/0000-0002-0032-4991)
- Zhu Chen (ORCID: https://orcid.org/0000-0001-5889-5415)
- Emily A. Carter (ORCID: https://orcid.org/0000-0001-7330-7554)
- Xiaofang Yang (ORCID: https://orcid.org/0000-0003-0598-6860)
- A. L. Gilman
Institutions
- Brookhaven National Laboratory (US)
- Princeton University (US)
- Peking University (CN)
- University of Massachusetts Amherst (US)
- Princeton Plasma Physics Laboratory (US)
- National Synchrotron Light Source II
Publication Details
- Journal
- Surface Science
- Published
- 2025-03-22
- DOI
- https://doi.org/10.1016/j.susc.2025.122743
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26
Funders
- U.S. Department of Energy
- Office of Science
- Basic Energy Sciences
- Air Force Office of Scientific Research
- Brookhaven National Laboratory