Increment in output power of resonant-tunneling-diode terahertz oscillator with long-cavity resonator

We theoretically investigated the cavity-length dependence on the output power in the resonant-tunneling-diode terahertz oscillator integrated with rectangular cavity resonator. We utilized an electromagnetic simulation for estimation of antenna and resonator admittances. High output powers of around 2 mW at 1 THz and 3 mW at 0.7 THz are expected from a single resonant-tunneling-diode oscillator with 20-μm-long cavity resonator.

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Publication Details

Published
2025-02-23
DOI
https://doi.org/10.1109/icmmts62835.2025.10925976
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
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Increment in output power of resonant-tunneling-diode terahertz oscillator with long-cavity resonator

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Semiconductor Lasers and Optical Devices
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Increment in output power of resonant-tunneling-diode terahertz oscillator with long-cavity resonator

Hiroki Tanaka, Suzuki Safumi, Hidenari Fujikata, Feifan Han, Takumi Shimura
article en

Abstract

We theoretically investigated the cavity-length dependence on the output power in the resonant-tunneling-diode terahertz oscillator integrated with rectangular cavity resonator. We utilized an electromagnetic simulation for estimation of antenna and resonator admittances. High output powers of around 2 mW at 1 THz and 3 mW at 0.7 THz are expected from a single resonant-tunneling-diode oscillator with 20-μm-long cavity resonator.

Tokyo Institute of Technology (JP)
Tokyo Institute of Technology
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Semiconductor Lasers and Optical Devices
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