A Cascode Pair Based on SiGe HPT for RoF/LiFi Applications
ABSTRACT A low‐cost high‐responsivity design of Si/SiGe heterojunction bipolar phototransistor (HPT) built in an industrial 55 nm‐BiCMOS technology is integrated in a cascode configuration with a bipolar transistor (HBT) to be used for microwave‐photonic communication receivers. Performances of both the cascode pair and the single heterojunction bipolar phototransistor are compared. At high‐frequency, the cascode circuit has better performances than the single HPT stage. At 850‐nm wavelength, the pair can reach a low‐frequency responsivity of 3.24 A/W and a bandwidth of 0.69 GHz when coupling losses are corrected.
Authors
- Polleux Jean‐Luc
- Catherine Algani (ORCID: https://orcid.org/0000-0002-0978-7730)
- Valentin Thary (ORCID: https://orcid.org/0009-0008-2534-8050)
- Chevalier Pascal
Institutions
- Conservatoire National des Arts et Métiers (FR)
- Centre National de la Recherche Scientifique (FR)
- STMicroelectronics (France) (FR)
- 3S Photonics (France) (FR)
- Université Gustave Eiffel (FR)
- Laboratoire d'électronique, systèmes de communication et microsystèmes (FR)
Publication Details
- Journal
- Electronics Letters
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1049/ell2.70219
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00