Thermal analysis of Recessed Source/Drain Junctionless MOSFET with Enhanced Electrostatic Performance

This research examines Recessed Source/Drain Junctionless Gate All Around MOSFET features. The analysis focuses on crucial electrostatic factors, including the correlation amongst gate voltage as well as drain current, drain voltage as well as drain current, sub-threshold slope as well as transconductance. In addition, research investigates the deterioration of human-computer interaction (HCI) in both the Re-S/D-JGAA MOSFET and the JGAA MOSFET, while comparing their respective performance. These evaluations are conducted at various temperatures. The Re-S/D-JGAA MOSFET demonstrates a significantly reduced drain current in comparison to the JGAA MOSFET. The Re-S/DJGAA MOSFET has a much greater I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>/I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf> current ratio than the JGAA MOSFET, the study demonstrates. Thus, the Re-S/D-JGAA MOSFET is ideal for AC/DC applications, especially at high temperatures.