Admittance Measurements of Au/SnO₂/p-InP (MOS) Device

In this study, an Au/SnO 2 /p-InP metal oxide semiconductor (MOS) device was prepared, and its electrical and dielectric properties were analyzed using admittance measurements (Y = G + i ω C) with an impedance analyzer. Capacitance (C) and conductance (G) were measured across frequencies (1 kHz to 1 MHz) at 300 K. It was observed that C and G values varied with frequency, attributed to the presence of interface traps/states. The interface state density (N ss ) was evaluated using the low-high frequency (C LF –C HF ) capacitance technique. The series resistance (R s ) of the MOS capacitor was determined by the conductance method. Additionally, the variation of dielectric properties, including complex dielectric permittivity ( ε * = ε ′ − i ε ′), loss tangent (tan δ ), and ac conductivity ( σ ac ), with frequency was analyzed through impedance measurements. Moreover, ac conductivity was also studied using Jonscher’s universal power law. The results suggest that the fabricated capacitor is suitable for use as a MOS device in electronic circuits.