Investigation on the Valance Band Structure of HOPG Using Ultraviolet Photoelectron Spectroscopy System

This paper provides a basic introduction to the principles of ultraviolet photoelectron spectroscopy (UPS), ultraviolet photoelectron yield spectroscopy (PYS), and constant final state yield spectroscopy (CFS-YS) measurements. Different measurements were performed on HOPG, obtaining a series of electronic energy level parameters such as work function <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\Phi=4.56\text{eV}$</tex>, valance band energy <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$E_{V B M}=0.87$</tex> eV, and ionization energy <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$I_{th}=5.35\text{eV}$</tex>. It offers an initial understanding of the surface electronic structure via the ultraviolet photoelectron spectroscopy. The electronic structure of the material surface can be more finely characterized through the comparison and joint analysis of different measurement methods.

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Published
2024-10-31
DOI
https://doi.org/10.1109/icsmd64214.2024.10920570
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
Field-Weighted Citation Impact
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article

Investigation on the Valance Band Structure of HOPG Using Ultraviolet Photoelectron Spectroscopy System

Xiaohan Hou, Hisao Ishii, B. Y. Tong, Yu Chen et al.
Advanced Semiconductor Detectors and Materials
article

Investigation on the Valance Band Structure of HOPG Using Ultraviolet Photoelectron Spectroscopy System

Xiaohan Hou, Hisao Ishii, B. Y. Tong, Yu Chen, Yali Guo, Inoue Seiun
article en

Abstract

This paper provides a basic introduction to the principles of ultraviolet photoelectron spectroscopy (UPS), ultraviolet photoelectron yield spectroscopy (PYS), and constant final state yield spectroscopy (CFS-YS) measurements. Different measurements were performed on HOPG, obtaining a series of electronic energy level parameters such as work function <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\Phi=4.56\text{eV}$</tex>, valance band energy <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$E_{V B M}=0.87$</tex> eV, and ionization energy <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$I_{th}=5.35\text{eV}$</tex>. It offers an initial understanding of the surface electronic structure via the ultraviolet photoelectron spectroscopy. The electronic structure of the material surface can be more finely characterized through the comparison and joint analysis of different measurement methods.

Chiba University (JP), Xi'an Jiaotong University (CN)
National Key Project for Synthetic Biology, State Key Laboratory of Electrical Insulation and Power Equipment
Openalex Percentile: Top 74%
Advanced Semiconductor Detectors and Materials
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Investigation on the Valance Band Structure of HOPG Using Ultraviolet Photoelectron Spectroscopy System — Xiaohan Hou, Hisao Ishii, et al. · (2024) | TGRS Research Map | TGRS