Design and integration of hybrid IIIV/Si mid-infrared laser sources and photonic circuits for chemical sensing applications (Conference Presentation)

Growing interest in Mid-IR silicon photonic devices for spectroscopy, biomolecular sensing, security, and industrial applications, has led to the development of novel class of chip-level integrated components for chemical sensing: the Quantum Cascade Laser (QCL) Mid-IR sources, the Photonic Integrated Circuits (PICs), and the detectors. In this paper, we present the design, fabrication, and characterization of hybrid III/V-on-Silicon (DFB and DBR) QC-Lasers operating in the 4 µm to 5 µm spectral range. These lasers are integrated on a new high-index-contrast silicon photonics platform with an efficient optical power transfer between the III-V active region and the silicon waveguide, eliminating power loss due to optical coupling mismatch between components. The Mid-IR silicon platform leverages both the design and the fabrication yield and enables collective testing and sorting at the wafer scale.

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Published
2025-03-20
DOI
https://doi.org/10.1117/12.3040694
Primary Topic
Photonic and Optical Devices
Type
article
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article

Design and integration of hybrid IIIV/Si mid-infrared laser sources and photonic circuits for chemical sensing applications (Conference Presentation)

Maxime Lepage, Badhise Ben Bakir, V. Mathieu, Toufiq Bria et al.
Photonic and Optical Devices
article

Design and integration of hybrid IIIV/Si mid-infrared laser sources and photonic circuits for chemical sensing applications (Conference Presentation)

Maxime Lepage, Badhise Ben Bakir, V. Mathieu, Toufiq Bria, Christian Seassal, Christophe Jany, Jérémy Da Fonseca, Mattéo Chobe, Tristan Faure, Jean-Michel Hartmann
article en

Abstract

Growing interest in Mid-IR silicon photonic devices for spectroscopy, biomolecular sensing, security, and industrial applications, has led to the development of novel class of chip-level integrated components for chemical sensing: the Quantum Cascade Laser (QCL) Mid-IR sources, the Photonic Integrated Circuits (PICs), and the detectors. In this paper, we present the design, fabrication, and characterization of hybrid III/V-on-Silicon (DFB and DBR) QC-Lasers operating in the 4 µm to 5 µm spectral range. These lasers are integrated on a new high-index-contrast silicon photonics platform with an efficient optical power transfer between the III-V active region and the silicon waveguide, eliminating power loss due to optical coupling mismatch between components. The Mid-IR silicon platform leverages both the design and the fabrication yield and enables collective testing and sorting at the wafer scale.

École Centrale de Lyon (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Laboratoire d'Électronique des Technologies de l'Information (FR)
Openalex Percentile: Top 96%
Photonic and Optical Devices
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