Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)

Monolithically grown germanium-tin (GeSn) avalanche photodiodes (APDs) on silicon have been demonstrated for infrared light detection. A thin Ge buffer layer with a thickness of 100 nm was applied to efficiently collect photo-generated electrons. Two different 2 % and 5 % Sn compositions were adopted and for the first time in GeSn/Si APDs, clear punch-through behavior and a saturated primary responsivity before avalanche breakdown were observed in both cases. The spectral response shows the cut-off at ~1850 nm and ~2100 nm for 2% Sn and 5% Sn respectively, attributed to GeSn absorption. An undisputed multiplication gain was achieved, with a maximum value of 4.5 and 3.55 for 2 % Sn and 5 % Sn respectively, directly in referencing to the saturated primary responsivity from the same device, unlike previous reports where different GeSn p-i-n photodiode were used.

Authors

Institutions

Publication Details

Published
2025-03-20
DOI
https://doi.org/10.1117/12.3052405
Primary Topic
Advanced Optical Sensing Technologies
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)

Yanqing Qiu, Abdul Sahib Mehdi Ali, Jifeng Liu, Shui-Qing Yu et al.
Advanced Optical Sensing Technologies
article

Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation)

Yanqing Qiu, Abdul Sahib Mehdi Ali, Jifeng Liu, Shui-Qing Yu, Wei Du, Grey Abernathy, Perry C. Grant, Quang Minh Thai, Justin Rudie, Rajesh Kumar, Sylvester Amoah, Steven Akwabli, Xiaoxin Wang, Baohua Li
article en

Abstract

Monolithically grown germanium-tin (GeSn) avalanche photodiodes (APDs) on silicon have been demonstrated for infrared light detection. A thin Ge buffer layer with a thickness of 100 nm was applied to efficiently collect photo-generated electrons. Two different 2 % and 5 % Sn compositions were adopted and for the first time in GeSn/Si APDs, clear punch-through behavior and a saturated primary responsivity before avalanche breakdown were observed in both cases. The spectral response shows the cut-off at ~1850 nm and ~2100 nm for 2% Sn and 5% Sn respectively, attributed to GeSn absorption. An undisputed multiplication gain was achieved, with a maximum value of 4.5 and 3.55 for 2 % Sn and 5 % Sn respectively, directly in referencing to the saturated primary responsivity from the same device, unlike previous reports where different GeSn p-i-n photodiode were used.

Dartmouth College (US), University of Arkansas at Fayetteville (US)
Openalex Percentile: Top 94%
Advanced Optical Sensing Technologies
DOISourceOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Monolithically grown germanium-tin (GeSn) infrared avalanche photodiodes on silicon (Conference Presentation) — Yanqing Qiu, Abdul Sahib Mehdi Ali, et al. · (2025) | TGRS Research Map | TGRS