Characterization of the Gu-Ge-In: Microstructural, Mechanical, Electrical Properties, Scheil and Lever Simulation

Based on application of Cu-based alloys and special application of Ge-based alloys it is from huge interest to study properties of the Cu-Ge-X alloys. In this paper selected system is Cu-Ge-In. This system was previously studied by our group. In this paper results are focused on electrical and mechanical properties. Experimental tests were performed on 12 ternary alloys. Six different experimental techniques were used to test the ternary alloys. The microstructure was tested using light optical microscopy (LOM) and scanning electron microscopy (SEM). The composition of the phases and the composition of the alloys were examined by energy dispersive spectroscopy (EDS). X-ray diffractometric analysis (XRD) was used to determine the phases. Properties such as hardness and electrical conductivity tests were performed. Those properties were used for calculation and modeling those properties along all composition ranges. Isothermal section at 25°C were predicted. Calculated isothermal section and were compared with results of the EDS and XRD test. Good agreement of calculated and experimental result has been reached. Best results of electrical conductivity and hardness give alloys with composition Cu80.93Ge9.86In9.21.