Defect‐Assisted Dual‐Channel Optical Storage Material with Photochromism and Concealed Persistent Luminescence

Abstract Optical information storage technology offers several advantages, including cost‐effectiveness, multidimensional storage, and rewritable capability. Consequently, it has become increasingly popular for optical storage media. Herein, a novel optical information storage material Na 2 CaGe 2 O 6 :Bi 3+ (NCGO:Bi 3+ ) is developed using a non‐equivalent substitution strategy, which exhibits photochromic (PC) and ultraviolet persistent luminescence (UV PersL) properties. NCGO:Bi 3+ demonstrates excellent white‐to‐brown PC performance under 254 nm light irradiation. The brown phosphor can be effectively bleached using 425 nm light or thermal stimulation, demonstrating excellent reversibility over multiple cycles. Additionally, the phosphor displays UV PersL characteristics. The representative sample NCGO:0.001Bi 3+ with a duration time exceeding 10 h after 254 nm light excitation, peaking at 358 nm. Simultaneously, due to the electrons captured by deep traps can be released via low‐energy light excitation, the sample also exhibits photostimulated PersL characteristics. Specifically, oxygen vacancies (V O ) are identified the primarily responsible for the observed PC and PersL phenomena by X‐ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance (EPR) analyses. Overall, this work indicates that the combination of 254 nm light‐induced PC and PersL in a single material has potential for designing advanced luminescent materials for the application of optical information storage.

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Publication Details

Journal
Laser & Photonics Review
Published
2025-03-19
DOI
https://doi.org/10.1002/lpor.202402308
Citations
15
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
10.96

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article

Defect‐Assisted Dual‐Channel Optical Storage Material with Photochromism and Concealed Persistent Luminescence

Haijie Guo, Qiufeng Shi, Yuhua Wang, Lili Liu et al.
15 citations
Laser & Photonics Review
Advanced Memory and Neural Computing
10.96
article

Defect‐Assisted Dual‐Channel Optical Storage Material with Photochromism and Concealed Persistent Luminescence

Haijie Guo, Qiufeng Shi, Yuhua Wang, Lili Liu, Cai’e Cui, Lei Wang, Jianwei Qiao, Ping Huang
article en
15 citations

Abstract

Abstract Optical information storage technology offers several advantages, including cost‐effectiveness, multidimensional storage, and rewritable capability. Consequently, it has become increasingly popular for optical storage media. Herein, a novel optical information storage material Na 2 CaGe 2 O 6 :Bi 3+ (NCGO:Bi 3+ ) is developed using a non‐equivalent substitution strategy, which exhibits photochromic (PC) and ultraviolet persistent luminescence (UV PersL) properties. NCGO:Bi 3+ demonstrates excellent white‐to‐brown PC performance under 254 nm light irradiation. The brown phosphor can be effectively bleached using 425 nm light or thermal stimulation, demonstrating excellent reversibility over multiple cycles. Additionally, the phosphor displays UV PersL characteristics. The representative sample NCGO:0.001Bi 3+ with a duration time exceeding 10 h after 254 nm light excitation, peaking at 358 nm. Simultaneously, due to the electrons captured by deep traps can be released via low‐energy light excitation, the sample also exhibits photostimulated PersL characteristics. Specifically, oxygen vacancies (V O ) are identified the primarily responsible for the observed PC and PersL phenomena by X‐ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance (EPR) analyses. Overall, this work indicates that the combination of 254 nm light‐induced PC and PersL in a single material has potential for designing advanced luminescent materials for the application of optical information storage.

Laser & Photonics ReviewVol. 19(12)
National Development and Reform Commission (CN), Lanzhou University (CN), Taiyuan University of Technology (CN)
National Natural Science Foundation of China, Shanxi Scholarship Council of China, Natural Science Foundation of Shanxi Province
Openalex Percentile: Top 1%
Advanced Memory and Neural Computing
10.96
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