Research on the Reliability Methods of SiC MOSFET Power Devices

This paper addresses the application of SiC MOSFET devices in the field of power electronics, focusing on two key issues: short-circuit failure and avalanche failure. Corresponding solutions are proposed. SiC devices, with their high thermal stability and wide bandgap, have great potential in high-temperature environments such as new energy vehicles and high-speed trains. However, their reliability and stability remain challenges in research and application. This paper first analyzes the mechanisms of short-circuit failure and avalanche failure of SiC MOSFETs, then proposes a novel structure that integrates an AD-JFET region into the device to improve short-circuit reliability. Additionally, methods such as reducing off-state gate voltage and optimizing P-well electric field distribution are suggested to enhance avalanche reliability. The results show that these design methods can effectively enhance the short-circuit and avalanche tolerance of SiC MOSFET devices, improving their stability and reliability in high-voltage and high-power applications, and providing new technical support for the miniaturization and lightweight design of power electronic equipment.