Al Doping Effect on Enhancement of Nonlinear Optical Absorption in Amorphous Bi2Te3 Thin Films

Bismuth telluride (Bi₂Te₃) has attracted significant attention due to its broadband ultrafast optical response and strong nonlinearity at high laser fluence in the field of optoelectronic materials. The objective of this work is to study the effect of Al doping on the structure, linear optical properties, and nonlinear optical absorption behavior of Bi₂Te₃ thin films. The amorphous Al-doped Bi₂Te₃ thin films with varying Al doping concentrations were prepared using magnetron co-sputtering. The structure and linear optical properties were characterized using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and UV/Vis/NIR spectrophotometry. The third-order nonlinear optical absorption properties of Al: Bi₂Te₃ thin films were investigated using the open-aperture Z-scan system with a 100 fs laser pulse width at a wavelength of 800 nm and a repetition rate of 1 kHz. The results indicate that Al dopant reduces both the refractive index and extinction coefficient and induces a redshift in the optical bandgap. The optical properties of the films can be effectively modulated by varying the Al doping concentration. Compared with undoped Bi₂Te₃ thin films, Al-doped Bi₂Te₃ thin films exhibit larger nonlinear optical absorption coefficients and higher damage thresholds and maintaining high transmittance. These findings provide experimental evidence and a reliable approach for the further optimization and design of ultrafast nonlinear optical devices.