High power wavelength tunable external cavity laser for optical transmission

We report a novel hybrid integrated photonic wavelength-tunable laser for transmitter applications. The device combines two photonic integrated circuit (PIC) technologies, Indium Phosphide (InP) and TriPleX<sup>&reg;</sup> silicon nitride (Si<sub>3</sub>N<sub>4</sub>), to realize a high-power laser. The laser comprises one semiconductor optical amplifier (SOA), integrated on InP, coupling into a Si<sub>3</sub>N<sub>4</sub> external cavity. The cavity includes a Vernier filter of two micro-ring resonators (MRRs) for highly precise wavelength selection. By tuning the MRRs, an ultra-narrow wavelength band is selected from the C-band for single-mode lasing. The laser provides over 21mW output power, with a linewidth 126Hz, over 60dB side-mode suppression ratio (SMSR), and relative intensity noise (RIN) &le;&minus;170dB/Hz. The MRRs are tuned via stress-optic actuation using lead zirconate titanate (PZT) films, which use &lt;1&mu;W per tuning element in quasi-static operation, resulting on a total of 0.5W for the device.

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Publication Details

Published
2025-03-20
DOI
https://doi.org/10.1117/12.3041200
Citations
1
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
0.73
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article

High power wavelength tunable external cavity laser for optical transmission

M. Zafar, Charoula Mitsolidou, Christos Tsokos, Ilka Visscher et al.
1 citations
Semiconductor Lasers and Optical Devices
0.73
article

High power wavelength tunable external cavity laser for optical transmission

M. Zafar, Charoula Mitsolidou, Christos Tsokos, Ilka Visscher, Raimond Frentrop, Nikolaos K. Lyras, Arjan Meijerink, Chris Roeloffzen, H. Avramopoulos, Roel Botter, Maria Massaouti, Efstathios Andrianopoulos, Eva Loukisa, Georgios Megas, Paul van Dijk
article en
1 citations

Abstract

We report a novel hybrid integrated photonic wavelength-tunable laser for transmitter applications. The device combines two photonic integrated circuit (PIC) technologies, Indium Phosphide (InP) and TriPleX<sup>&reg;</sup> silicon nitride (Si<sub>3</sub>N<sub>4</sub>), to realize a high-power laser. The laser comprises one semiconductor optical amplifier (SOA), integrated on InP, coupling into a Si<sub>3</sub>N<sub>4</sub> external cavity. The cavity includes a Vernier filter of two micro-ring resonators (MRRs) for highly precise wavelength selection. By tuning the MRRs, an ultra-narrow wavelength band is selected from the C-band for single-mode lasing. The laser provides over 21mW output power, with a linewidth 126Hz, over 60dB side-mode suppression ratio (SMSR), and relative intensity noise (RIN) &le;&minus;170dB/Hz. The MRRs are tuned via stress-optic actuation using lead zirconate titanate (PZT) films, which use &lt;1&mu;W per tuning element in quasi-static operation, resulting on a total of 0.5W for the device.

National Technical University of Athens (GR), LioniX (Netherlands) (NL)
Affordable and clean energy
Openalex Percentile: Top 30%
Semiconductor Lasers and Optical Devices
0.73
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High power wavelength tunable external cavity laser for optical transmission — M. Zafar, Charoula Mitsolidou, et al. · (2025) | TGRS Research Map | TGRS