Micro-transfer printing of InP SOAs on advanced silicon photonics platform for C-band pre-amplified receivers
We present a C-band pre-amplified receiver on an advanced silicon photonics platform, consisting of an indium phosphide semiconductor optical amplifier (InP SOA) integrated via micro-transfer printing (μTP), connected to a ring filter and a 50GHz germanium photodiode (Ge PD). The InP SOA provides 8.1dB small-signal gain at 1550.3nm for an injection current of 95mA. The ring filter has a 25dB extinction ratio and a 3dB bandwidth of 1.45nm to suppress the amplified spontaneous emission (ASE) noise from the SOA. In the 30 Gbps non-return-to- zero (NRZ) signal transmission experiment, the device exhibits a sensitivity of −18dBm at a bit-error rate (BER) of 10<sup>−6</sup> for an SOA injection current of 95mA, showing a 7dB improvement compared to the reference Ge PD.
Authors
- Senbiao Qin (ORCID: https://orcid.org/0000-0002-4952-5014)
- J. Décobert (ORCID: https://orcid.org/0000-0002-1610-9559)
- Nicolas Vaissière (ORCID: https://orcid.org/0000-0003-3568-1670)
- Joan Manel Ramírez (ORCID: https://orcid.org/0000-0002-3613-2633)
- Emadreza Soltanian (ORCID: https://orcid.org/0000-0002-6091-7350)
- Delphine Néel
- Jing Zhang (ORCID: https://orcid.org/0000-0002-8971-8611)
- Günther Roelkens
Institutions
- Ghent University (BE)
- III V Lab (FR)
Publication Details
- Published
- 2025-03-20
- DOI
- https://doi.org/10.1117/12.3041159
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00