Resistively detected electron spin resonance and <i>g-</i>factor in few-layer exfoliated MoS₂ devices

MoS₂has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the<i>g</i>-factor of MoS₂depending on device geometry is of great importance. Resistively detected electron spin resonance (RD-ESR) could be employed to determine the<i>g</i>-factor in micron-scale devices. However, its application and RD-ESR studies have been limited by Schottky or high-resistance contacts to MoS₂. Here, we exploit naturally<i>n</i>-doped few-layer MoS₂devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS₂devices. Using RD-ESR, we determine the<i>g</i>-factor of few-layer MoS₂to be ∼1.92 and observe that the<i>g</i>-factor value is independent of the charge carrier density within the limits of our measurements.