Investigating the behaviour of GAA-NC-VTFET with Improved DC and Analog/RF Parameters for Low Power Applications

The present work analyzed the behavior of GAA-NC-VTFET device using the 3D Silvaco TCAD simulator. The device has shown performance enhancement in DC as well as Analog/RF parameters as compared to conventional GAA-VTFET.The negative capacitance behaviour has presented a SS of 31 mV decade −1 with an improvement of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msup> <mml:mrow> <mml:mn>10</mml:mn> </mml:mrow> <mml:mrow> <mml:mn>10</mml:mn> </mml:mrow> </mml:msup> </mml:math> in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi mathvariant="normal">I</mml:mi> </mml:mrow> <mml:mrow> <mml:mi mathvariant="normal">ON</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mrow> <mml:mo>/</mml:mo> <mml:mi mathvariant="normal">I</mml:mi> </mml:mrow> <mml:mrow> <mml:mi mathvariant="normal">OFF</mml:mi> </mml:mrow> </mml:msub> </mml:math> ratio. Also, with enhanced transconductance and decreased parasitic capacitance and a better cut off frequency <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi mathvariant="normal">f</mml:mi> </mml:mrow> <mml:mrow> <mml:mi mathvariant="normal">T</mml:mi> </mml:mrow> </mml:msub> </mml:math> is obtained for GAA-NC-VTFET. Moreover, the proposed device also provides full voltage swing with shorter rise time, thus making it to be more suitable for digital as well as analog/RF applications.