Elucidating contact-limited temperature dependence of charge transport in 2D tin halide perovskite field-effect transistors

Abstract Two-dimensional (2D) tin halide perovskites are gaining attention for their potential in high-performance field-effect transistors (FETs) due to their ease of processibility and high mobility. However, their complex charge transport mechanism remains poorly understood with no definitive transport models established. While temperature-dependent mobility analysis is a proven method for constructing accurate charge transport models in a given material system, systematic temperature dependence studies in prototypical 2D tin perovskites, PEA 2 SnI 4 , have been rarely reported. Here, we investigate the temperature-dependent transport properties of PEA 2 SnI 4 in FETs, employing contact resistance analyses to decouple intrinsic channel mobility from contact resistance contributions. Our results reveal that the extracted mobility values are significantly contact-limited, particularly at lower temperatures, leading to substantial deviations in apparent mobility trends. By correcting for contact resistance, we establish that the intrinsic mobility of PEA 2 SnI 4 remains nearly temperature-independent from 100 K to 300 K. Our results clearly address the critical need to account for contact effects in determining carrier mobility of perovskite materials within the community, offering a refined framework for accurately evaluating and enhancing the performance of perovskite-based electronic devices.