Optoelectronic characteristics and stability evaluation of Ba<sub>2</sub>TiMxO<sub>6</sub> (Mx = Ge, Sn, Se, Te) p-type semiconductors as candidates for functional layers in optoelectronic devices

An investigation of novel Ba 2 TiMxO 6 (Mx = Ge, Sn, Se, Te), highlighting promising candidates for UV optoelectronics and solar cell applications.

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2025-01-01
DOI
https://doi.org/10.1039/d5tc00036j
Citations
4
Primary Topic
Electronic and Structural Properties of Oxides
Type
article
Field-Weighted Citation Impact
2.07

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article

Optoelectronic characteristics and stability evaluation of Ba2TiMxO6 (Mx = Ge, Sn, Se, Te) p-type semiconductors as candidates for functional layers in optoelectronic devices

Zijing Lin, Zia Ur Rehman
4 citations
Journal of Materials Chemistry C
Electronic and Structural Properties of Oxides
2.07
article

Optoelectronic characteristics and stability evaluation of Ba2TiMxO6 (Mx = Ge, Sn, Se, Te) p-type semiconductors as candidates for functional layers in optoelectronic devices

Zijing Lin, Zia Ur Rehman
article en
4 citations

Abstract

An investigation of novel Ba 2 TiMxO 6 (Mx = Ge, Sn, Se, Te), highlighting promising candidates for UV optoelectronics and solar cell applications.

Journal of Materials Chemistry CVol. 13(16)
University of Science and Technology of China (CN)
National Natural Science Foundation of China, University of Science and Technology of China
Openalex Percentile: Top 14%
Electronic and Structural Properties of Oxides
2.07
DOIOpen Access PDFOpenAlex
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