Rare-earth ion doped Al2O3 for on-chip lasers
Rare-earth ions doped into different host materials can provide optical amplification with excellent performance parameters thanks to their long intrinsic lifetime. In this work, we will give an overview of our recent developments on rare-earth ion doped Al<sub>2</sub>O<sub>3</sub> deposited by reactive sputtering including both erbium and thulium ion doping for operation in the C-band and in the 1800-2000 nm band.
Authors
- Meindert Dijkstra (ORCID: https://orcid.org/0000-0001-9633-1637)
- Ivo Hegeman
- Anne‐Catherine Etilé
- Dawson B. Bonneville (ORCID: https://orcid.org/0000-0002-1900-8999)
- Neetesh Singh (ORCID: https://orcid.org/0000-0001-9105-647X)
- Kai Wang (ORCID: https://orcid.org/0009-0007-4912-4652)
- Quentin Coulaud
- Sonia M. García‐Blanco (ORCID: https://orcid.org/0000-0001-8125-9038)
- Tobias Herr (ORCID: https://orcid.org/0000-0002-5966-6697)
- Ward Hendriks (ORCID: https://orcid.org/0000-0001-6432-0298)
- Milan Sinobad (ORCID: https://orcid.org/0000-0003-3490-0288)
- Jan Lorenzen (ORCID: https://orcid.org/0009-0008-6058-2002)
- Ghaya Baili
- Mahmoud A. Gaafar
- Franz X. Kärtner
- Carlos Osornio
Institutions
- Deutsches Elektronen-Synchrotron DESY (DE)
- LioniX (Netherlands) (NL)
- Lumibird (France) (FR)
- Thales (France) (FR)
- Université de Rennes (FR)
- University of Twente (NL)
Publication Details
- Published
- 2025-03-19
- DOI
- https://doi.org/10.1117/12.3050143
- Primary Topic
- Solid State Laser Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00