Wafer-scale and multi-Layer molybdenum disulfide film growth with layer number controllability up to 30 and its application in photodetectors with short response times

Wafer-scale MoS2 films are grown by sulfurizing amorphous MoS2 films deposited on sapphire substrates by using a radio-frequency sputtering system. Good layer number uniformity up to 30 layers is achieved. High responsivity 600 A/W and short rise/fall times < 10 ms are observed for the 10-layer MoS2/mono-layer graphene photodetector.

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Publication Details

Published
2025-03-19
DOI
https://doi.org/10.1117/12.3044240
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Wafer-scale and multi-Layer molybdenum disulfide film growth with layer number controllability up to 30 and its application in photodetectors with short response times

Yu-Han Huang
Chalcogenide Semiconductor Thin Films
article

Wafer-scale and multi-Layer molybdenum disulfide film growth with layer number controllability up to 30 and its application in photodetectors with short response times

Yu-Han Huang
article en

Abstract

Wafer-scale MoS2 films are grown by sulfurizing amorphous MoS2 films deposited on sapphire substrates by using a radio-frequency sputtering system. Good layer number uniformity up to 30 layers is achieved. High responsivity 600 A/W and short rise/fall times < 10 ms are observed for the 10-layer MoS2/mono-layer graphene photodetector.

National Taiwan University (TW), Academia Sinica (TW)
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Openalex Percentile: Top 96%
Chalcogenide Semiconductor Thin Films
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Wafer-scale and multi-Layer molybdenum disulfide film growth with layer number controllability up to 30 and its application in photodetectors with short response times — Yu-Han Huang · (2025) | TGRS Research Map | TGRS