Mid-infrared emission resonating with longitudinal optical phonon from surface micro-structures on ternary compound semiconductors

Abstract We exhibit the longitudinal optical (LO) or LO-like phonon resonant continuous-wave thermal radiation emission peaks via surface microstructures on ternary compound semiconductors at 630 K. Al x Ga 1− x N and Ga y In 1− y P thin films (0 ≤ x , y ≤ 1) are investigated. The properties of double peak emission from the phosphide alloys and single peak emission from the nitride alloys agree with the properties of persistent and amalgamic LO mode characteristics of respective alloys. The control of alloy composition allows for control of the frequency of the thermal radiation.