2D materials for near-infrared quantum emission

In this presentation, I will discuss the site-controlled generation of near-infrared (NIR) single-photon emitters in various two-dimensional (2D) material systems, including transition metal dichalcogenides, metal monochalcogenides, and heterostructures. Utilizing a scalable technique, we induce the emission of non-classical light through the precise implantation of localized strain and defect centers. The induced excitons, trapped by strain-induced potential wells and recombining at defect energy levels, produce bright, narrow-bandwidth photoluminescence (PL) with emission wavelengths spanning 900 nm to 1.6 μm, encompassing the critical telecom bands. Our Hanbury Brown and Twiss (HBT) experiments exhibit clear photon antibunching, unequivocally confirming the quantum nature of these emitters. Combining density functional theory (DFT) with scanning tunneling microscopy/spectroscopy (STM/STS) studies, we elucidate how the energy band structures are modulated by strain and various defect states, providing insights into the origin of quantum emissions.