Fabrication, integration, and control of color centers in hexagonal boron nitride

Color centers in hexagonal boron nitride (hBN) are an emerging platform for quantum information applications. When compared with other wide bandgap host materials such as silicon carbide and diamond, a key advantage of hBN is the ability to integrate atomically thin flakes with optoelectronic and photonic devices with simple fabrication techniques. In this talk, we will present recent results on site-controlled integration of emitters with integrated photonic resonators in silicon nitride, coupling of hBN emitters to surface acoustic wave cavity phonons for single-photon modulation and control, and progress on engineering new types of emitters related to oxygen- and carbon-based defects.