Graded index silicon germanium photonics circuits in the mid-infrared

A photonics platform based on graded SiGe waveguides has been developed for operating in the mid-IR range, with experimental demonstrations up to 11 &mu;m wavelength. Applications are related with absorption spectroscopy and sensing in the fingerprint region, and with free space communications. After an overview of the platform, the presentation will focus on: (i) integrated high speed modulators operating in a wide spectral range, based on free carrier plasma dispersion effect, (ii) integrated resonators operating around 8 &mu;m wavelength with quality factors beyond 10<sup>5</sup> . We will also show that mid-IR graded SiGe photonics circuits can be fabricated on industrial-scale 200 mm wafers, and that low propagation losses can be obtained in a wide spectral range of the mid-IR. These results thus pave the way for a scalable silicon compatible mid-infrared platform.

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Published
2025-03-19
DOI
https://doi.org/10.1117/12.3041154
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
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article

Graded index silicon germanium photonics circuits in the mid-infrared

Delphine Marris‐Morini, Stefano Calcaterra, Victor Turpaud, David Bouville et al.
Photonic and Optical Devices
article

Graded index silicon germanium photonics circuits in the mid-infrared

Delphine Marris‐Morini, Stefano Calcaterra, Victor Turpaud, David Bouville, Carlos Alonso‐Ramos, Andres Remis, Hamza Dely, Nouria Bouchikhi, Laurent Vivien, Étienne Herth, Jacopo Frigerio, Jean‐René Coudevylle, Thi Hao Nhi Nguyen, Giovanni Isella, Annabelle Bricout, Julia Krawczyk, Samson Edmond, Jean-Michel Hartmann, Gabriel Lima, Davide Impelluso, Javier Huertas Pedroche
article en

Abstract

A photonics platform based on graded SiGe waveguides has been developed for operating in the mid-IR range, with experimental demonstrations up to 11 &mu;m wavelength. Applications are related with absorption spectroscopy and sensing in the fingerprint region, and with free space communications. After an overview of the platform, the presentation will focus on: (i) integrated high speed modulators operating in a wide spectral range, based on free carrier plasma dispersion effect, (ii) integrated resonators operating around 8 &mu;m wavelength with quality factors beyond 10<sup>5</sup> . We will also show that mid-IR graded SiGe photonics circuits can be fabricated on industrial-scale 200 mm wafers, and that low propagation losses can be obtained in a wide spectral range of the mid-IR. These results thus pave the way for a scalable silicon compatible mid-infrared platform.

Centre National de la Recherche Scientifique (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Université Paris-Saclay (FR), CEA Grenoble (FR), Centre de Nanosciences et de Nanotechnologies (FR), Laboratoire d'Électronique des Technologies de l'Information (FR), Université Grenoble Alpes (FR), Politecnico di Milano (IT)
European Commission
Openalex Percentile: Top 96%
Photonic and Optical Devices
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