Simultaneous adjustment of afterglow wavelength and intensity in indium-substituted Ga<sub>1.99−<i>x</i></sub>In<sub><i>x</i></sub>O<sub>3</sub>:0.01Cr<sup>3+</sup>
Replacing gallium with indium in the crystal structure of Ga 2 O 3 :Cr 3+ redshifts the emission wavelength to 830 nm and induces persistent luminescence.
Authors
- Ailijiang Tuerdi
- Aikelaimu Aihemaiti (ORCID: https://orcid.org/0009-0004-4638-684X)
- Abdukader Abdukayum (ORCID: https://orcid.org/0000-0002-2009-1179)
- Qingqing Xie (ORCID: https://orcid.org/0000-0003-0505-6102)
- Zheng Yalin (ORCID: https://orcid.org/0009-0008-3617-2732)
- Xiangkai Qiao (ORCID: https://orcid.org/0000-0003-2877-1678)
- Yan Peng
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d4tc05353b
- Citations
- 2
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.85
Funders
- Natural Science Foundation of Xinjiang Province
- Government of Xinjiang Uygur Autonomous Region of China
- National Natural Science Foundation of China