Interfacial Atomic Mechanisms of Single‐Crystalline MoS<sub>2</sub> Epitaxy on Sapphire (Adv. Mater. 11/2025)
Interfacial Atomic Mechanisms In article number 2414317, Huaze Zhu, Huashan Li, Wei Kong, and co-workers reveal the interfacial atomic mechanisms governing the epitaxial growth of single-crystalline molybdenum disulfide on sapphire substrates. Through high-resolution characterization and theoretical calculations, the critical role of interfacial composition in determining single-crystalline quality is elucidated. These findings provide new theoretical insights for the controlled growth of single-crystalline two-dimensional materials.
Authors
- Changhong Cao (ORCID: https://orcid.org/0000-0002-9707-3518)
- Ji Chen (ORCID: https://orcid.org/0000-0003-1603-1963)
- Hongyu Hou (ORCID: https://orcid.org/0000-0002-2151-2043)
- Wei Kong (ORCID: https://orcid.org/0000-0002-7965-4407)
- Yuxuan Chen (ORCID: https://orcid.org/0000-0002-0928-6733)
- Wenhao Li (ORCID: https://orcid.org/0000-0002-6411-4539)
- Han Chen
- Huashan Li (ORCID: https://orcid.org/0000-0002-3439-3864)
- Huaze Zhu (ORCID: https://orcid.org/0009-0009-0115-6748)
- Jichuang Shen (ORCID: https://orcid.org/0009-0007-9165-8682)
Institutions
- Sun Yat-sen University (CN)
- Shenzhen Polytechnic University (CN)
- Westlake University (CN)
- McGill University (CA)
- Zhejiang University (CN)
Publication Details
- Journal
- Advanced Materials
- Published
- 2025-03-01
- DOI
- https://doi.org/10.1002/adma.202570090
- Citations
- 1
- Primary Topic
- Machine Learning in Materials Science
- Type
- article
- Field-Weighted Citation Impact
- 0.52