Molecular beam epitaxy of AlGaN nanowires: source configuration and correlated material properties and device characteristics
Advancement on the molecular beam epitaxy of AlGaN nanowires is discussed with a focus on the effect of system layout, through which it aims to spark new thinking on how the system layout – a less discussed topic – affects the material properties.
Authors
- Songrui Zhao (ORCID: https://orcid.org/0000-0002-0277-040X)
Institutions
- McGill University (CA)
Publication Details
- Journal
- CrystEngComm
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ce00147a
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 2.52
Funders
- McGill University
- Natural Sciences and Engineering Research Council of Canada