Preparation, Characterization, and Performance Optimization of Cu2ZnSnS4 (CZTS) Absorber Layer Deposited by Sol-Gel Spin Coating Technique

This study focuses on the deposition of thin films of copper zinc tin sulphide (CZTS) on uncoated soda lime glass (SLG) substrates, followed by comprehensive characterisations using X-ray diffraction (XRD), Raman spectroscopy, and UV-V is spectroscopy. The XRD and Raman results revealed the presence of kesterite CZTS and secondary phases such as SnS (TS), ZnS, and CuSnS (CTS) of the grown thin films, providing valuable insights into the crystalline structure of the samples. UV-V is spectroscopy demonstrated that the transmittance of some of the samples exceeded 90 % in the visible region, indicating their potential for transparent and efficient electronic and optoelectronic applications. Furthermore, the effect of both thickness and annealing temperature on the optical energy gap () were studied. The allowed direct optical energy gap was found to be in the range of 2.30 to 2.94 eV for the as-deposited samples and 1.82 to 2.91 eV for the annealed samples.

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Publication Details

Journal
UMYU Scientifica
Published
2025-03-19
DOI
https://doi.org/10.56919/usci.2541.001
Citations
2
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
1.46

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article

Preparation, Characterization, and Performance Optimization of Cu2ZnSnS4 (CZTS) Absorber Layer Deposited by Sol-Gel Spin Coating Technique

A. U. Moreh, S. Abdullahi, A. M. Wara, Musa Momoh
2 citations
UMYU Scientifica
Chalcogenide Semiconductor Thin Films
1.46
article

Preparation, Characterization, and Performance Optimization of Cu2ZnSnS4 (CZTS) Absorber Layer Deposited by Sol-Gel Spin Coating Technique

A. U. Moreh, S. Abdullahi, A. M. Wara, Musa Momoh
article en
2 citations

Abstract

This study focuses on the deposition of thin films of copper zinc tin sulphide (CZTS) on uncoated soda lime glass (SLG) substrates, followed by comprehensive characterisations using X-ray diffraction (XRD), Raman spectroscopy, and UV-V is spectroscopy. The XRD and Raman results revealed the presence of kesterite CZTS and secondary phases such as SnS (TS), ZnS, and CuSnS (CTS) of the grown thin films, providing valuable insights into the crystalline structure of the samples. UV-V is spectroscopy demonstrated that the transmittance of some of the samples exceeded 90 % in the visible region, indicating their potential for transparent and efficient electronic and optoelectronic applications. Furthermore, the effect of both thickness and annealing temperature on the optical energy gap () were studied. The allowed direct optical energy gap was found to be in the range of 2.30 to 2.94 eV for the as-deposited samples and 1.82 to 2.91 eV for the annealed samples.

UMYU ScientificaVol. 4(1)
The Federal Polytechnic, Ado-Ekiti (NG), Usmanu Danfodiyo University (NG)
Tertiary Education Trust Fund
Openalex Percentile: Top 19%
Chalcogenide Semiconductor Thin Films
1.46
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