METALLIC AND SEMICONDUCTOR NANOPARTICLES INTEGRATED INTO THIN LAYERS OF HYDROGENATED AMORPHOUS SILICON OR SILICONCARBIDE

The combination of PECVD -plasma enhanced chemical vapor deposition and VE -vacuum evaporation at one vacuum chamber is in situ method how to integrate semiconductor (Ge) and metallic (Sn) nanoparticles into amorphous hydrogenated thin films and their structures on the base of a-Si:H or a-SiC:H.In this work we focus our effort to deposit a-SiC:H thin films from monomethylsilane (MMS = SiH3-CH3) diluted by hydrogen in the ratio 2/100 sccm.The Ge evaporates at vacuum higher than 2E-5 Pa.The TEM -transmission electron microscopy and AFM -atomic force microscopy are used for microscopical characterization of thin films while PDS -photothermal deflection spectroscopy and PLphotoluminescence spectroscopy are used for their spectroscopical characterization.