Single‐Crystal and Polycrystal SiC Bonding for Cost‐effective Chip Fabrication (Adv. Mater. Interfaces 6/2025)

Bonding Single-Crystal and Polycrystalline Silicon Carbide To reduce the cost of silicon carbide chips, in article 2400816, Zhenzhong Wang, Peng Gao, and co-workers employ the ion beam etching (IBE) method to activate the surfaces of single-crystal silicon carbide and polycrystalline silicon carbide, directly bonding this system. This method not only effectively reduces silicon oxide formation, thereby preserving thermal conductivity, but also achieves the bonding energy necessary to withstand the manufacturing process when combined with annealing.