Unconventional gate-induced superconductivity in transition-metal dichalcogenides
Superconductivity in few-layer semiconducting transition-metal dichalcogenides (TMDs) can be induced by field-effect doping through ionic-liquid gating. While several experimental observations have been collected over the years, a fully consistent theoretical picture is still missing. Here we develop a realistic framework that combines the predictive power of first-principles simulations with the versatility and insight of Bardeen-Cooper-Schrieffer gap equations to rationalize such experiments. The multivalley nature of semiconducting TMDs is taken into account, together with the doping- and momentum-dependent electron-phonon and Coulomb interactions. Consistently with experiments, we find that superconductivity occurs when the electron density is large enough that the <a:math xmlns:a="http://www.w3.org/1998/Math/MathML"><a:mi>Q</a:mi></a:math> valleys get occupied, as a result of a large enhancement of electron-phonon interactions. Despite being phonon driven, the superconducting state is predicted to be sensitive to Coulomb interactions, which can lead to the appearance of a relative sign difference between valleys and thus to a <b:math xmlns:b="http://www.w3.org/1998/Math/MathML"><b:msub><b:mi>s</b:mi><b:mrow><b:mo>+</b:mo><b:mo>−</b:mo></b:mrow></b:msub></b:math> character. We discuss qualitatively how such scenario may account for many of the observed physical phenomena for which no microscopic explanation has been found so far, including in particular the presence of a large subgap density of states, and the sample-dependent dome-shaped dependence of <c:math xmlns:c="http://www.w3.org/1998/Math/MathML"><c:msub><c:mi>T</c:mi><c:mi>c</c:mi></c:msub></c:math> on accumulated electron density. Our results provide a comprehensive analysis of gate-induced superconductivity in semiconducting TMDs, and introduce an approach that will likely be valuable for other multivalley electronic systems, in which superconductivity occurs at relatively low electron density.
Authors
- Alberto F. Morpurgo (ORCID: https://orcid.org/0000-0003-0974-3620)
- Thibault Sohier (ORCID: https://orcid.org/0000-0003-3060-5775)
- Marco Gibertini (ORCID: https://orcid.org/0000-0003-3980-5319)
- Ivar Martin (ORCID: https://orcid.org/0000-0002-2010-6449)
Institutions
- University of Geneva (CH)
- University of Modena and Reggio Emilia (IT)
- Argonne National Laboratory (US)
- Université de Montpellier (FR)
- University of Chicago (US)
- Istituto Nanoscienze (IT)
Publication Details
- Journal
- Physical Review Research
- Published
- 2025-03-19
- DOI
- https://doi.org/10.1103/physrevresearch.7.013290
- Citations
- 6
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 3.11
Funders
- U.S. Department of Energy
- Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
- Ministero dell’Istruzione, dell’Università e della Ricerca