Unconventional gate-induced superconductivity in transition-metal dichalcogenides

Superconductivity in few-layer semiconducting transition-metal dichalcogenides (TMDs) can be induced by field-effect doping through ionic-liquid gating. While several experimental observations have been collected over the years, a fully consistent theoretical picture is still missing. Here we develop a realistic framework that combines the predictive power of first-principles simulations with the versatility and insight of Bardeen-Cooper-Schrieffer gap equations to rationalize such experiments. The multivalley nature of semiconducting TMDs is taken into account, together with the doping- and momentum-dependent electron-phonon and Coulomb interactions. Consistently with experiments, we find that superconductivity occurs when the electron density is large enough that the <a:math xmlns:a="http://www.w3.org/1998/Math/MathML"><a:mi>Q</a:mi></a:math> valleys get occupied, as a result of a large enhancement of electron-phonon interactions. Despite being phonon driven, the superconducting state is predicted to be sensitive to Coulomb interactions, which can lead to the appearance of a relative sign difference between valleys and thus to a <b:math xmlns:b="http://www.w3.org/1998/Math/MathML"><b:msub><b:mi>s</b:mi><b:mrow><b:mo>+</b:mo><b:mo>−</b:mo></b:mrow></b:msub></b:math> character. We discuss qualitatively how such scenario may account for many of the observed physical phenomena for which no microscopic explanation has been found so far, including in particular the presence of a large subgap density of states, and the sample-dependent dome-shaped dependence of <c:math xmlns:c="http://www.w3.org/1998/Math/MathML"><c:msub><c:mi>T</c:mi><c:mi>c</c:mi></c:msub></c:math> on accumulated electron density. Our results provide a comprehensive analysis of gate-induced superconductivity in semiconducting TMDs, and introduce an approach that will likely be valuable for other multivalley electronic systems, in which superconductivity occurs at relatively low electron density.

Authors

Institutions

Publication Details

Journal
Physical Review Research
Published
2025-03-19
DOI
https://doi.org/10.1103/physrevresearch.7.013290
Citations
6
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
3.11

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Unconventional gate-induced superconductivity in transition-metal dichalcogenides

Alberto F. Morpurgo, Thibault Sohier, Marco Gibertini, Ivar Martin
6 citations
Physical Review Research
2D Materials and Applications
3.11
article

Unconventional gate-induced superconductivity in transition-metal dichalcogenides

Alberto F. Morpurgo, Thibault Sohier, Marco Gibertini, Ivar Martin
article en
6 citations

Abstract

Superconductivity in few-layer semiconducting transition-metal dichalcogenides (TMDs) can be induced by field-effect doping through ionic-liquid gating. While several experimental observations have been collected over the years, a fully consistent theoretical picture is still missing. Here we develop a realistic framework that combines the predictive power of first-principles simulations with the versatility and insight of Bardeen-Cooper-Schrieffer gap equations to rationalize such experiments. The multivalley nature of semiconducting TMDs is taken into account, together with the doping- and momentum-dependent electron-phonon and Coulomb interactions. Consistently with experiments, we find that superconductivity occurs when the electron density is large enough that the <a:math xmlns:a="http://www.w3.org/1998/Math/MathML"><a:mi>Q</a:mi></a:math> valleys get occupied, as a result of a large enhancement of electron-phonon interactions. Despite being phonon driven, the superconducting state is predicted to be sensitive to Coulomb interactions, which can lead to the appearance of a relative sign difference between valleys and thus to a <b:math xmlns:b="http://www.w3.org/1998/Math/MathML"><b:msub><b:mi>s</b:mi><b:mrow><b:mo>+</b:mo><b:mo>−</b:mo></b:mrow></b:msub></b:math> character. We discuss qualitatively how such scenario may account for many of the observed physical phenomena for which no microscopic explanation has been found so far, including in particular the presence of a large subgap density of states, and the sample-dependent dome-shaped dependence of <c:math xmlns:c="http://www.w3.org/1998/Math/MathML"><c:msub><c:mi>T</c:mi><c:mi>c</c:mi></c:msub></c:math> on accumulated electron density. Our results provide a comprehensive analysis of gate-induced superconductivity in semiconducting TMDs, and introduce an approach that will likely be valuable for other multivalley electronic systems, in which superconductivity occurs at relatively low electron density.

Physical Review ResearchVol. 7(1)
University of Geneva (CH), University of Modena and Reggio Emilia (IT), Argonne National Laboratory (US), Université de Montpellier (FR), University of Chicago (US), Istituto Nanoscienze (IT)
U.S. Department of Energy, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, Ministero dell’Istruzione, dell’Università e della Ricerca
Openalex Percentile: Top 9%
2D Materials and Applications
3.11
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.