An Efficient Simulation Method for Self-Heating Effect of GaN HEMTs with Time Scaling Factor

To address the issue of low efficiency for electro-thermal coupling in physical modeling, a time scaling factor is proposed to expedite the simulation process of self-heating effects. Firstly, the two-dimensional electron gas (2DEG) produced by polarization effects, and heterojunction formed by the contact of different semiconductor materials in GaN HEMTs are characterized by continuity conditions. Then, the process of scaling factor acting by electrical and thermal time stepping is introduced. Simulation results show that the proposed method can save 93% computing time and 54% computing memory compared with COMSOL while ensuring accuracy. The self-developed algorithm provides a novel analysis scheme for the electrothermal characterization of devices.