Thermal Performance of 940 nm AlGaAs-Based VCSELs Grown on Germanium

VCSEL thermal resistances are determined from power-current-voltage-wavelength measurements performed on nominally identical epitaxial structures grown on Ge and GaAs substrates. We show that the effective thermal conductivity of the VCSEL is increased when grown on Ge substrates.

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Publication Details

Journal
IEEE photonics journal
Published
2025-03-19
DOI
https://doi.org/10.1109/jphot.2025.3552951
Citations
2
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
1.46
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article

Thermal Performance of 940 nm AlGaAs-Based VCSELs Grown on Germanium

Sara-Jayne Gillgrass, J. I. Davies, Craig P. Allford, John M. Baker et al.
2 citations
IEEE photonics journal
Semiconductor Lasers and Optical Devices
1.46
article

Thermal Performance of 940 nm AlGaAs-Based VCSELs Grown on Germanium

Sara-Jayne Gillgrass, J. I. Davies, Craig P. Allford, John M. Baker, Peter M. Smowton, Samuel Shutts
article en
2 citations

Abstract

VCSEL thermal resistances are determined from power-current-voltage-wavelength measurements performed on nominally identical epitaxial structures grown on Ge and GaAs substrates. We show that the effective thermal conductivity of the VCSEL is increased when grown on Ge substrates.

IEEE photonics journalVol. 17(2)
IQE (United Kingdom) (GB), Compound Semiconductor Centre (United Kingdom) (GB), Cardiff University (GB)
Affordable and clean energy
Openalex Percentile: Top 19%
Semiconductor Lasers and Optical Devices
1.46
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