Single step MACE for SiNWs fabrication with (Au & Ag) metals

A crucial step in creating nanodevices is the wafer-level integration of high-aspect-ratio silicon nanostructures. Vertically aligned silicon nanowires may be produced at low cost and in large volumes using metal-aided chemical etching (MACE) technology. Since the parameters of Si MACE are dynamic and change as the etching progresses, managing the etching patterns to get SiNWs, one key component of MACE, for example, is the noble metal catalyst, which only controls the form and crystallographic orientation of the resultant nanostructures while speeding up the dissolution of Si in regions where close contact is maintained. In this procedure, silicon is wet etched using a noble metal catalyst layer. Over the past 10 years, much research has been done on the MACE process. A variety of metals, including Au, Pt, Ag, Pd, Cu, and Ir, were studied to develop a platform of technologies for particular uses. In particular, research has been done on the shapes of 3D structures and the reflectance of those results. A new method based on localized chemical etching is proposed for creating large-area & mask-free, orientated silicon nanowire (SiNWs) arrays on silicon substrates at almost ambient temperature. Our approach is based on the dissolving of a silicon substrate in an aqueous fluoride solution, which is caused by metal-induced (either by Ag or Au) excessive local oxidation. The etched silicon structures will be created using standard semiconductor manufacturing techniques. The foundation for further processing leading to integrated functioning systems is these nanostructure templates.