Enhanced dielectric properties of alternative NO-gas-based SiO<sub>2</sub> films <i>via</i> plasma-enhanced chemical vapor deposition for high-performance indium–gallium–zinc oxide thin-film transistors
The effects of N 2 annealing on dielectric properties of NO-based SiO 2 films fabricated through plasma-enhanced chemical vapor deposition and device performance of IGZO TFTs with them were investigated underlying the charge-transport mechanism.
Authors
- Tae‐Jun Ha (ORCID: https://orcid.org/0000-0002-0935-795X)
- Youngjin Kang (ORCID: https://orcid.org/0000-0001-7554-3999)
- Eunha Kim (ORCID: https://orcid.org/0000-0001-7041-1727)
- Yong‐Hoon Kim (ORCID: https://orcid.org/0000-0003-0057-1893)
- Yunhui Jang
- Se-Ryong Park
- Junsin Yi
Institutions
- Kwangwoon University (KR)
- Sungkyunkwan University (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc00213c
- Citations
- 2
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 1.46