High operating temperature (> 200 °C) InAs/GaAs quantum-dot laser with co-doping technique
Abstract Working reliably at elevated operating temperatures is a key requirement for semiconductor lasers used in optical communication. InAs/GaAs quantum-dot (QD) lasers have been considered a promising solution due to the discrete energy states of QDs. This work demonstrates temperature-insensitive and low threshold InAs/GaAs QD lasers incorporating co-doping technique, compared with p-type modulation doping. 2 mm long co-doped QD lasers exhibit a low threshold current density of 154 A cm −2 (210 A cm −2 ) and operate at a high heatsink temperature of 205 °C (160 °C) under the pulsed (continuous-wave) mode, outperforming the p-type doped QD lasers. The results reveal that co-doping effectively enhances both high-temperature stability and threshold reduction in InAs/GaAs QD lasers, surpassing the performance of conventional p-type modulation doping. This approach offers a pathway toward cooling-free operation, making co-doped QD lasers suitable for data and telecommunication applications.
Authors
- Manyu Dang
- Shujie Pan (ORCID: https://orcid.org/0000-0001-9122-2060)
- Jiajing Yuan (ORCID: https://orcid.org/0000-0001-9201-3535)
- Huiwen Deng (ORCID: https://orcid.org/0000-0003-2680-152X)
- A.J. Seeds (ORCID: https://orcid.org/0000-0002-5228-627X)
- Hui Jia (ORCID: https://orcid.org/0000-0002-8325-3948)
- Xuanchang Zhang
- Mingchu Tang (ORCID: https://orcid.org/0000-0001-6626-3389)
- Pawan Mishra (ORCID: https://orcid.org/0000-0001-9764-6016)
- Siming Chen (ORCID: https://orcid.org/0000-0002-4361-0664)
- Huiyun Liu (ORCID: https://orcid.org/0000-0002-7654-8553)
- Peter M. Smowton (ORCID: https://orcid.org/0000-0002-9105-4842)
- Haotian Zeng (ORCID: https://orcid.org/0000-0002-7328-9576)
- Yangqian Wang (ORCID: https://orcid.org/0000-0002-2404-9613)
- Jae‐Seong Park (ORCID: https://orcid.org/0000-0002-6486-2342)
- H. Wang (ORCID: https://orcid.org/0000-0001-6321-2391)
- George Mathew Jandu
Institutions
- University College London (GB)
- Cardiff University (GB)
Publication Details
- Journal
- Journal of Physics D Applied Physics
- Published
- 2025-03-19
- DOI
- https://doi.org/10.1088/1361-6463/adc275
- Citations
- 6
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 4.38
Funders
- Engineering and Physical Sciences Research Council