Silicon nitride integrated photonics: enabling versatile PICs for diverse applications

The scope of photonic integrated circuits (PICs) has expanded to applications where the material properties of silicon present limitations. Silicon nitride (SiN) has emerged as a pivotal technology for the development of PICs, offering a complementary solution to silicon-based platforms due to its versatile optical properties. These properties have established SiN as an optimal material for a broad spectrum of applications, ranging from NIR to visible wavelengths. In this talk, we highlight our journey to demonstrate low-loss and low-temperature (<350°C) silicon nitride layers with refractive indices ranging between 1.5 and 2.7, showcasing their potential to enable enhanced linear and nonlinear functionalities in both near-infrared and visible wavelength regimes paving the way for innovative applications in various technological fields.