Optically active InGaAs axial nanowire heterostructures for quantum integrated photonic circuits
We propose a monolithically integrated, vertical-cavity nanowire (NW) quantum light source coupled to a silicon (Si) Quantum Photonic Integrated Circuit (QPIC). Starting from modelling of the coupling efficiencies of an embedded quantum emitter and its dependencies on key geometrical parameters of NW/Si-waveguide dimensions, we further show experimental progress towards such a deterministic quantum light source using InGaAs emitters in a GaAs(Sb) NW cavity. Key understanding of the growth and optical properties of the InGaAs emitter is provided from systematic structure-property relationship studies.
Authors
- Hyowon W. Jeong (ORCID: https://orcid.org/0000-0002-1454-6069)
- Gregor Koblmüller (ORCID: https://orcid.org/0000-0002-7228-0158)
- Markus Doeblinger (ORCID: https://orcid.org/0000-0001-9241-1402)
- Jonathan J. Finley (ORCID: https://orcid.org/0000-0003-3036-529X)
- Nitin Mukhundhan (ORCID: https://orcid.org/0000-0003-1767-9972)
- Knut Müller‐Caspary (ORCID: https://orcid.org/0000-0002-2588-7993)
- Jonas Lähnemann (ORCID: https://orcid.org/0000-0003-4072-2369)
- Akhil Ajay (ORCID: https://orcid.org/0000-0001-5738-5093)
- Sebastian Sturm (ORCID: https://orcid.org/0000-0003-3460-9407)
- R. ZELL
- Mikel Gomez-Ruiz
Institutions
- Paul Drude Institute for Solid State Electronics (DE)
- Ludwig-Maximilians-Universität München (DE)
Publication Details
- Published
- 2025-03-19
- DOI
- https://doi.org/10.1117/12.3043402
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00