High-quality six-inch engineered InP-on-GaAs substrates for low-cost optoelectronic device fabrication

Indium Phosphide (InP) holds a crucial role in the semiconductor industry for innovative applications such as next-generation telecommunication services, data centers, photonic systems, as well as automotive and consumer electronics. In most of these areas, however, the high cost and limited throughput of InP-based device fabrication present significant challenges. Reducing the substrate costs and enhancing the production yield are necessary for InP device to remain a competitive and viable solution in the rapidly growing semiconductor market. InP-on-GaAs engineered substrates represent a viable solution to reach these objectives. In this work, we explore the potential of 6-inch InP-on-GaAs engineered substrates by fabricating and characterizing an InGaAs photonic power converter for operation at 1.55µm. The results highlight a promising path toward a potential low-cost route for InP-based optoelectronic devices.