Analysis of effective carrier mobility in the multi-quantum wells of DUV AlGaN LEDs by carrier transport simulations

AlGaN-based LEDs show promise in Deep Ultraviolet (DUV) emission for environmental and medical uses, but optimizing Carrier Injection Efficiency (CIE) is challenging. This study uses a microscopic simulation model to investigate the emission spectra of dual wavelength AlGaN LEDs. The model includes advanced features such as carrier transport dynamics, and radiative recombination processes. The simulations examine LEDs with varying Quantum Wells (QWs) emitting at 233 nm and 250 nm to understand carrier distribution. Results indicate that electron densities in the MQW stack are higher than hole densities, leading to an imbalance that affects CIE and optical spectra.