Hybrid SiC-LiNbO3 platform for active integrated photonics

Silicon carbide (SiC) has been of interest lately for the realization of integrated photonic structures over a wide spectral range (from visible to deep-IR) and for a wide range of applications, from quantum photonics to information processing. On the other hand, lithium niobate (LiNbO3) can enable ultrafast and low-power active devices through its electro-optic effect. This talk is focused on a hybrid SiC-LiNbO3 in which all CMOS-compatible device fabrication is performed in the SiC layer while reconfiguration/tuning is performed by using the electro-optic effect of LiNbO3 (without etching this material). Details about platform development as well as design, fabrication, and characterization of active photonic devices will be presented, and the prospects of this platform for different active and nonlinear photonic applications will be discussed.