Understanding gradual degradation due to dislocations in GaAs-based lasers

With growing interest in heterogeneous and monolithic integration of near-IR lasers on silicon, there is a need to revisit mechanisms by which crystalline defects result in degradation in devices due to dark-line defect growth. We will present insights generated from materials and defect engineering of reliable monolithically-integrated lasers on silicon at datacom wavelengths using quantum dots. We will also update our understanding of driving forces for recombination-enhanced dislocation glide and climb processes towards building more robust quantum well devices.