Fabrication process of RF-photonic device with micro-transfer printing of III-V photodiode

III/V semiconductors exhibit high carrier mobility, facilitating high-frequency operations. By combining the photodiode based on these semiconductors with silicon nitride (Si₃N₄) waveguide, a groundbreaking platform for photonic integrated circuits can be fabricated. This integration allows the superior electronic properties of III/V materials with the robust waveguide, enabling high frequency operation. In this paper, we present a detailed procedure for the integration of III-V optoelectronics with Si₃N₄ waveguides using the micro-transfer printing.