Quantum dot lasers at 300 mm for silicon photonics and datacenter optical interconnect applications

Quantum Dot Lasers are seeing a resurgence of interest as potential replacements for optical transceivers in energy efficient datacentres. Integration of QDLs onto Si photonics platforms enables low-cost mass production of datacom lasers by leveraging established CMOS foundry processing. Access to a 150mm GaAs based QDL enables any established GaAs manufacturer to enter the datacom sector. Wafer to wafer variation <3nm and within wafer variation < 0.25% at 1290 nm is typical for a multi wafer run. A p-down version enables with an RMS <0.5nm enables flip chip bonding of III-V materials. Data for QDs heterogeneously grown on a 300mm PIC shows positioning of a QD region within 80nm of the waveguide after 3um of epitaxy. Growth of QDLs on Ge will also be presented. This offers a path to 300mm but is best suited to a cost effective 200mm solution. Moreover, Ge substrates are CMOS compatible. Data will show similar PL characteristics to material grown on GaAs. In summary we will present data from a high volume QDL manufacturing platform that can meet the demands of substrate form factor, substrate material and upstream QDL process flow.